| PART |
Description |
Maker |
| M5M44400BRT-6S M5M44400BRT-7S |
FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM 快速页面模194304位（1048576 - Word位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| HN62408 HN62408FP HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM 524288字16-BIT/1048576-WORD × 8位CMOS掩膜可编程ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M5100 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5 |
1048576-bit (131072-word by 8-bit) CMOS static RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| AT27C2048 AT27C2048-12 AT27C2048-12JC AT27C2048-12 |
2-Megabit 128K x 16 OTP EPROM 128K X 16 OTPROM, 120 ns, PDIP40
12-Bit Asynchronous Binary Counter 16-TSSOP -40 to 85 128K X 16 OTPROM, 70 ns, PDIP40
12-Bit Asynchronous Binary Counter 16-TSSOP -40 to 85 128K X 16 OTPROM, 70 ns, PDSO40
2-Megabit 128K x 16 OTP EPROM 128K X 16 OTPROM, 120 ns, PQCC44
Enhanced Product 12-Bit Asynchronous Binary Counter 16-TSSOP -55 to 125
12-Bit Asynchronous Binary Counter 16-VQFN -40 to 85
12-Bit Asynchronous Binary Counter 16-SSOP -40 to 85
12-Bit Asynchronous Binary Counter 16-TVSOP -40 to 85
12-Bit Asynchronous Binary Counter 16-PDIP -40 to 85
12-Bit Asynchronous Binary Counter 16-SOIC -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| M5M51008CFP-70HI |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
MITSUBISHI
|
| MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1 |
67108864-BIT (1048576-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG |
From old datasheet system
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M44258-7 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH1S72CPG-10 MH1S72CPG-12 MH1S72CPG-15 |
75497472-BIT (1048576-WORD BY 72-BIT)SynchronousDRAM
|
Mitsubishi Electric Corporation
|
